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本文报道了一种制备SnO_2透明导电薄膜的新方法——水溶液常压蒸发热解法并研究了该薄膜的性能。这种方法比喷涂热解法还要简单,而且可蒸镀在任意形状的表面上。测试表明,本法制备的SnO_2薄膜与喷涂热解法一样,在形成薄膜过程中也形成缺氧的SnO_(2-x)结构,因此具有n型半导体性质。SnO_2薄膜在可见光范围内具有减反射及透光性能;在红外光范围内具有反射及降低发射率的性能。
In this paper, we report a new method of preparing SnO_2 transparent conductive films - atmospheric pressure evaporation pyrolysis of aqueous solution and study the performance of the film. This method is simpler than spray pyrolysis and can be deposited on any surface of any shape. Tests show that the SnO 2 film prepared by this method has the same n-type semiconductor properties as the spray pyrolysis method, and also forms an oxygen-deficient SnO 2-x structure during film formation. SnO 2 films have antireflection and light transmission properties in the visible range, and reflect and reduce emissivity in the infrared range.