The First Principles Investigations of the Thermoelectric Properties of GaN with p-and n-Type Doping

• 作 者: 吴文涛 吴克琛 马祖驹 洒荣建 韦永勤 李巧红
• 机 构: State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matte
• 出 处: 结构化学
• 发表日期: 2012年11期
• 关键词: figure doping Boltzmann Seebeck merit conduction bipolar ceramics relaxation hun

We investigate the thermoelectric properties of GaN with p-and n-type doping by the first principles calculation and the semi-classical Boltzmann theory. We find that the power factors (S2σof p-type GaN (-3500 W/mK2) is about twice that of the n-type (-1750 W/mK2), which indicates the thermoelectric properties of p-type GaN would be better. Thermal conductivity of GaN crystal decreases rapidly as the temperature increases, but it is still too large for thermoelectric applications. The figure of merit (ZT) estimated at 1500 K is 0.134 for p-type GaN crystal and 0.062 for the n-type.

We investigate the thermoelectric properties of GaN with p-and n-type doping by the first principles calculation and the semi-classical Boltzmann theory. We find that the power factors (S2σof p-type GaN (-3500 W / mK2) is about twice that of the n-type (-1750 W / mK2), which indicates the thermoelectric properties of p-type GaN would be better. Thermal conductivity of GaN crystal decreases rapidly as the temperature increases, but it is still too large for thermoelectric applications. The figure of merit (ZT) estimated at 1500 K is 0.134 for p-type GaN crystal and 0.062 for the n-type.