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据报导,美国桑迪亚国立实验室已研制成一种新的多应变量子阱场效应晶体管。这种晶体管是具有两个平行的10nm量子阱的GaAs/In_(0.2)Ga_(0.8)As结构,用Be从顶部和底部进行调制掺杂。晶体管的栅为1×150μm~2Ti/Au、
It is reported that the United States Sandia National Laboratory has developed a new multi-strain quantum well field effect transistor. This transistor is a GaAs / In_ (0.2) Ga_ (0.8) As structure with two parallel 10 nm quantum wells, modulated with Be doped from the top and bottom. The gate of the transistor is 1 × 150 μm to 2 Ti / Au,