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本文用透射电子显微镜(TEM)研究了在低温基片上生长的正入射和斜入射蒸发钴膜的显微结构特征,并且用表面吸附原子的运动和蒸发原子的自屏蔽效应讨论了这种结构的形成过程.
In this paper, the microstructural characteristics of normal incident and oblique incident evaporating cobalt films grown on low temperature substrates were investigated by transmission electron microscopy (TEM). The structures of these structures were discussed by the motion of the adsorbed atoms on the surface and the self-shielding effect of the evaporated atoms Formation process.