论文部分内容阅读
提出了金属-半导体欧姆接触退化的快速评估方法-温度斜坡快速评价法，并建立了自动评估系统，用该方法和系统测得的欧姆接触退化激活能，和传统方法相比，耗时少，所需样品少，所得结果和传统方法一致．同时，针对传统AuGeNi／Au欧姆接触系统的缺点，提出了加TiN扩散阻挡层的新型欧姆接触系统．实验表明，新型欧姆接触系统的可靠性远远优于传统AuGeNi／Au欧姆接触系统．
A rapid evaluation method of metal-semiconductor ohmic contact degradation-temperature ramp was developed and an automatic evaluation system was established. Compared with the traditional method, the deactivation energy of ohmic contact measured by this method and system is less time-consuming, Less sample required, the results obtained and the traditional method. In the meantime, in view of the disadvantages of the conventional AuGeNi / Au ohmic contact system, a new ohmic contact system with a TiN diffusion barrier is proposed. Experiments show that the reliability of the new ohmic contact system is far superior to the traditional AuGeNi / Au ohmic contact system.