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在绝缘衬底上的硅(SOI)制备的二极管型非制冷红外焦平面是利用单晶硅PN结二极管作为温度探测器,比其它类型非制冷红外焦平面具有自己的独特优势.描述了传统型像素的结构与特性,并提出一种改进型结构.在传统的像素结构中,红外吸收结构直接覆盖于二极管表面,其填充系数仅为21%.改进后的结构将红外吸收层悬空并覆盖整个像素表面,使吸收结构能够达到80%,大大提高了器件的吸收率.计算结果也显示改进后的结构在像素尺寸为35μm×35μm时,器件的灵敏度可达到7.75×10~(-3)V/K,等效功率噪声(NETID)可减小至43 mK(F/10.0).同时,ANSYS的仿真结果也表明改进后的结构在吸收率上的提高,证明了此结构的可行性.
The silicon-based (SOI) diode-based uncooled infrared focal plane fabricated on an insulative substrate utilizes its single-crystal PN junction diode as its temperature detector and offers its own unique advantages over other types of uncooled infrared focal planes. Pixel structure and characteristics, and proposed an improved structure in the traditional pixel structure, the infrared absorption structure directly covers the diode surface, the fill factor of only 21%. The improved structure of the infrared absorption layer and cover the entire floating Pixel surface, the absorption structure can be achieved up to 80%, greatly improving the absorption rate of the device. The calculated results also show that the improved structure of the pixel size of 35μm × 35μm, the device sensitivity can reach 7.75 × 10 -3 V / K, and the equivalent power noise (NETID) can be reduced to 43 mK (F / 10.0). Simultaneously, the simulation results of ANSYS also show that the improved structure improves the absorptivity, which proves the feasibility of this structure.