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采用溶胶–凝胶后硒化法制备了铜锌锡硫硒薄膜,其薄膜表面平整、无裂纹。通过简化铜锌锡硫前驱体溶胶的制备以及后退火时避免使用硫化氢气体(H2S)等方法使铜锌锡硫硒薄膜的制备工艺得到简化。选用低毒有机物乙二醇为溶剂,Cu(CH3COO)2、Zn(CH3COO)2、SnCl2·2H2O和硫脲为原料,制备铜锌锡硫前驱体溶胶。XRD、Raman、EDX和SEM分析表明制备的铜锌锡硫硒薄膜为锌黄锡矿结构,所有薄膜均贫铜富锌,用0.2 g硒粉、硒化20 min得到的铜锌锡硫硒薄膜其结晶较好,表面晶粒可达1.0μm左右。透射光谱分析结果表明,随硒含量的增加,铜锌锡硫硒薄膜的光学带隙从1.51 eV减小到1.14 eV。
The copper-zinc-tin-sulfur-selenium film was prepared by sol-gel selenization method. The surface of the film was smooth and crack-free. The preparation process of copper-zinc-tin-sulfur-sulfur-selenide thin film is simplified by simplifying the preparation of the copper-zinc-tin-sulfur precursor sol and avoiding the use of hydrogen sulfide gas (H2S) after the annealing. Cu (CH3COO) 2, Zn (CH3COO) 2, SnCl2 · 2H2O and thiourea were used as raw materials to prepare copper-zinc-tin-sulfur precursor sol. The results of XRD, Raman, EDX and SEM showed that the prepared ZnSe thin films were ZnTiO3 and all the films were poor Cu and Zn. The crystal is better, the surface grain up to about 1.0μm. The results of transmission spectrum analysis showed that the optical band gap of copper-zinc-tin-sulfur-sulfur-selenide film decreased from 1.51 eV to 1.14 eV with the increase of selenium content.