94MeV Xe离子辐照引起的薄膜硅的光学带隙变化研究(英文)

• 作 者: 杨成绍
• 出 处: IMP & HIRFL Annual Report
• 发表日期: 2008年00期
• 关键词: crystalline 光学带隙 离子辐照 amorphous 薄膜 irradiated systematically Mono 英文 sharply

Mono-crystalline silicon(c-Si),thin films of amorphous silicon(a-Si) and nano-crystalline silicon(nc-Si) were irradiated at room temperature(RT) with 94 MeV Xe-ions to 1.0×

Mono-crystalline silicon (c-Si), thin films of amorphous silicon (a-Si) and nano-crystalline silicon (nc-Si) were irradiated at room temperature (RT) with 94 MeV Xe-ions to 1.0 ×