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研究了Ni全硅化物金属栅功函数调整技术.研究表明,通过在多晶硅硅化前向多晶硅栅内注入杂质能够有效地调整Ni全硅化物金属栅的栅功函数.通过注入p型或n型杂质,如BF2,As或P,能够将Ni全硅化物金属栅的功函数调高或调低,以分别满足pMOS管和nMOS管的要求.但是注入大剂量的As杂质会导致分层现象和EOT变大,因此As不适合用来调节Ni全硅化物金属栅的栅功函数.由于FUSI工艺会导致全硅化金属栅电容EOT减小,全硅化金属栅电容的栅极泄漏电流大于多晶硅栅电容.
The work function adjustment technique of Ni fully suicide metal gate was studied.The results show that the gate work function of Ni fully suicide metal gate can be effectively adjusted by implanting impurities into the polysilicon gate before the polycrystalline silicon silicide.After the implantation of p- or n-type impurities , Such as BF2, As, or P, can increase or decrease the work function of the Ni silicide metal gate to meet the requirements of pMOS and nMOS, respectively, but high levels of As impurity can cause delamination and EOT Therefore, As is unsuitable for adjusting the gate work function of the Ni-fully-silicided metal gate, the gate leakage current of the fully-silicided metal gate-capacitor is larger than that of the polysilicon gate electrode due to the decrease of the EOT of the fully-silicided metal gate electrode due to the FUSI process.