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A top contact n-type organic field-effect transistor with low operating voltage was fabricated by employing Ta2O5/PMMA as the double insulators and PTCDI-C12 as the semiconductor active layer. The Ta2O5 layer was prepared by using simple economical anodization technique and the PMMA layer was prepared by using the spin-coating method. Compared with the OFET with single Ta2O5 insulator,the device with double insulators shows obviously better electrical performance. It has a field effect electron mobility of 0.063 cm2/Vs,an on/off ratio of 1.7×104 and a threshold voltage of 2.3 V.
A top contact n-type organic field-effect transistor with low operating voltage was fabricated by employing Ta2O5 / PMMA as the double insulators and PTCDI-C12 as the semiconductor active layer. The Ta2O5 layer was prepared by using simple economical anodization technique and the PMMA Compared with OFET with single Ta2O5 insulator, the device with double insulators shows obviously electrical performance. It has a field effect with electron mobility of 0.063 cm2 / Vs, an on / off ratio of 1.7 × 104 and a threshold voltage of 2.3 V.