Turning ZrTe5 into a semiconductor through atom intercalation

• 作 者: QiYuan Li YangYang Lü JingHu
• 出 处: Science China(Physics,Mechanics & Astronomy)
• 发表日期: 0年期
• 关键词: Zr Te Figure Turning ZrTe5 into a semiconductor through atom intercalation Rev Z
• 基金项目: supported by the Ministry of Science and Technology of China(Grant Nos.2014CB921103,and 2015CB921203);the National Natural Science Foundation of China(Grant Nos.11774149,11790311,11674157,11674154,5

In this study we successfully intercalated potassium（K）atoms into single ZrTe₅crystals by liquid ammonia method,and found a semimetal-to-semiconductor transition at low temperatures in K-intercalated ZrTe₅.As the K concentration increased,the resistance anomalous peak was gradually suppressed until finally disappearing.Whilst,the corresponding Hall resistance measurements consistently showed a sign reversal.The semimetal-to-semiconductor transition can be attributed to a lattice expansion induced by atom intercalation,leading to a larger energy band gap.