光刻胶灰化工艺与深亚微米线条的制作

• 作 者: 孙自敏 刘理天 李志坚
• 机 构: 清华大学微电子所
• 出 处: 微细加工技术
• 发表日期: 1998年02期
• 关键词: 光刻胶 深亚微米 电子束光刻 器件尺寸 真空度 栅长 氧等离子体 应腔 射频电流 栅条

随着器件尺寸的缩小，细线条的制作成为很关键的工艺，普通光学光刻已接近其分辨率的极限，而电子束光刻和Ｘ射线光刻技术复杂、费用昂贵。本文对光刻胶灰化工艺进行了分析和研究，并应用此工艺进行了深亚微米线条的制作，在普通光学光刻机上制作出宽度小于０．２５μｍ细线条。我们已将此工艺成功地应用在深亚微米ＭＯＳＦＥＴ的制作中。

With the shrinking of device size, making thin lines becomes a key process. Ordinary optical lithography is close to the limit of its resolution. Electron beam lithography and X-ray lithography are complicated and expensive. In this paper, the photoresist ashing process was analyzed and studied, and the deep submicron lines were fabricated by this process. Thin lines with width less than 0.25μm were fabricated on a common optical lithography machine. We have successfully applied this process to the fabrication of deep sub-micron MOSFETs.