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一 引言 近年来,氧化铁选择透明掩模越来越普遍地应用于半导体平面器件的生产中。据认为它具有许多优越性:1.选择透明,反射率低,可以方便套刻,改善线条边缘,提高分辨率。2.由于氧化铁膜是无定型结构,针孔很少。3.耐用。 但是,目前的氧化铁版大都是CVD法制造的,制造过程中总觉得有一个五羰基铁毒害的缺点。 最近,新材料聚乙烯二茂铁在苏州地区化工中心试验所投入生产,为使用涂敷法制造氧化铁版创造了良好的条件。我们于七七年下半年对此作了一系列的试验。今年以来投入集成电路和光电器件生产中使用,大部替代了我们原来制造使用的氧化铬掩模。我们部分保留了氧化铬版,准备在长期的大生产中对二者进行比较。
I. INTRODUCTION In recent years, the choice of transparent oxide of iron oxide has become more and more common in semiconductor flat devices. It is considered to have many advantages: 1. Choose transparent, low reflectivity, you can easily overlay, improve the edge of the line, improve the resolution. 2. As the iron oxide film is amorphous structure, pinholes rarely. Durable However, most of the current iron oxide plates are manufactured by the CVD method. In the manufacturing process, there is always a shortcoming of poisoning iron pentacarbonyl. Recently, the new material, polyethylene ferrocene, was put into production at the Suzhou Chemical Industry Center Test Center and created favorable conditions for the coating method to produce iron oxide plates. We conducted a series of experiments on this in the second half of the seventy-seven. This year into the integrated circuits and optoelectronic devices used in the production, most of the original replacement of our original use of chromium oxide mask. We have partially preserved the chrome oxide plate in preparation for a comparison between the two in long-term mass production.