论文部分内容阅读
我们通过切换耦合电极的方法制备了μc-si:H/a-Si:H多层膜.这种多层膜的电导率呈各向异性,暗电导温度关系曲线可近似地看成由两条直线组成.随着 μc-Si:H亚层厚度的减小,喇曼谱中晶态峰降低,暗电导温度曲线的弯折点移向高温段.我们用纯电阻模型和单量子阱模型进行了讨论.
We have prepared the μc-si: H / a-Si: H multilayers by switching the coupling electrode.The conductivity of this multilayers is anisotropic, and the dark conductance temperature curve can be approximated by two As the thickness of the μc-Si: H sub-layer decreases, the Raman peak decreases and the bend point of the dark conductivity temperature shifts to the high temperature.We use the pure resistance model and the single quantum well model Discuss.