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目前流行的一些教科书、科技书(见参考资料[1]～[7]),在论述半导体存储器工作原理时,对静态MOS存储器中门控管导通条件的分析只注意了管子栅极的电位.因此提出只要在存储单元的字线上加入脉冲,门控管将被导通.有的书(见参考资料[4])还明确提出:“在字线上加入脉冲同时将门控管T_5,T_6打开”.有的外文科技书也有类似的说法(见参考资料[8]).
At present, some textbooks, science and technology books (see references [1] ~ [7]), when discussing the working principle of semiconductor memory, analyze the conduction condition of gated MOSFET in static MOS memory only pay attention to the potential of tube gate . Therefore, it is proposed that the gate should be turned on by simply adding a pulse to the word line of the memory cell. Some books (see reference [4]) also clearly state that “adding a pulse to the word line and simultaneously connecting the gate T5, T_6 open. ”Some foreign language science and technology books have a similar argument (see reference [8]).