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研究了400千电子伏的硒离子以3×10~(12)～2×10~(15)/厘米~2的剂量注入掺铬的半绝缘GaAs衬底中,并在800～1000℃的温度之间退火时,注入层的载流子浓度和迁移率的分布与剂量和退火温度的关系。退火中用溅射的氮氧化铝和氮化硅薄膜作为保护注入表面的密封剂。当沿随机方向或沿{110}面方向注入时,其载流子分布均呈现出“深尾”。业已发现,当注入剂量超过1×10~(14)/厘米~2时,为得到较高的载流子浓度和迁移率,退火温度不得低于900℃。用氮氧化铝膜密封的样品与用Si_3N_4膜密封的相比,载流子浓度要高2到3倍,且迁移率也略微高一些。用氮氧化铝薄膜作密封剂时,得到的最大载流子浓度大约是4×10~(18)/厘米~2。
Selenium ions at 400 keV were implanted into a chromium-doped semi-insulating GaAs substrate at a dose of 3 × 10 ~ (12) ~2 × 10 ~ (15) / cm ~ 2, , The distribution of carrier concentration and mobility in the implanted layer, as a function of dose and annealing temperature. Sputtered aluminum nitride and silicon nitride films were used as the encapsulant to protect the implanted surface during annealing. The carrier distribution shows a “deep tail” when implanted in a random direction or along the {110} plane. It has been found that the annealing temperature should not be lower than 900 ° C for higher carrier concentration and mobility when the implantation dose exceeds 1 × 10 14 / cm 2. The samples sealed with the aluminum oxynitride film have a higher carrier concentration of 2 to 3 times higher and a slightly higher mobility than those sealed with the Si_3N_4 film. When using aluminum oxynitride film as a sealant, the maximum carrier concentration is about 4 × 10 ~ (18) / cm ~ 2.