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利用电化学扫描隧道显微镜（ＥＣ－ＳＴＭ）初步研究了重掺锑硅（１１１）抛光片表面的微结构．多数硅晶片表面不同部位的ＳＴＭ形貌相表明，表面处理过程产生的微缺陷远比晶体生长过程产生的微缺陷多；粗糙度约为几个纳米的大面积平整区域与面积虽小但缺陷密度很高而且无规则分布的微区共存．微缺陷密度与晶体完整性、掺杂浓度和抛光条件有关．轻掺锑硅（１１１）表面相对平整，微结构尺寸较大（１００ｎｍ左右）边缘较平滑；重掺锑硅表面微缺陷密度很高，结构复杂，平整度明显降低．表面机械损伤，杂质条纹，过腐蚀等缺陷密度通过优化表面抛光条件可以有效降低或避免．
The microstructure of the surface of heavily antimony-doped silicon (111) was investigated by electrochemical scanning tunneling microscope (EC-STM). The STM topography of different parts of the surface of most silicon wafers shows that the micro-defects generated by the surface treatment are much more than the micro defects generated during the growth of the crystal. The large area with a roughness of about several nanometers and the small area but the defect density High and irregular distribution of micro-coexistence. Micro-defect density and crystal integrity, doping concentration and polishing conditions. Lightly doped antimony silicon (111) surface is relatively flat, the microstructure size is larger (about 100nm) edge is smooth; heavily doped antimony silicon surface microdefects density is high, the structure is complex, flatness decreased significantly. Surface mechanical damage, impurity stripes, over-corrosion and other defect density can be effectively reduced or avoided by optimizing the surface polishing conditions.