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不同于传统的CMP,ECMP的去除速率与下压力无关。由于利用了二价铜离子与铜界面之间的弱键合,ECMP能够用电解抑制剂来进行更有效的去除。电化学机械抛光(ECMP)技术利用电荷来使平坦化变得更容易。外加电压将金属铜氧化,得到它的离子(Cu+和Cu++)。然后这些铜离子与电解液中的化学物质发生反应,形成钝化层。抑制剂是ECMP所用电
Unlike conventional CMP, the removal rate of ECMP is independent of the downforce. ECMP enables more efficient removal with electrolytic inhibitors due to the use of weak bonds between the divalent copper ions and the copper interface. Electrochemical Mechanical Polishing (ECMP) techniques make use of electric charges to make planarization easier. The applied voltage oxidizes the metallic copper to obtain its ions (Cu + and Cu ++). These copper ions then react with the chemicals in the electrolyte to form a passivation layer. Inhibitors are the electricity used by ECMPs