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采用具有高导热、高绝缘等优异物理性能的金刚石膜作为绝缘理层，利用金刚石膜上的薄层硅（SOD）技术，制作了54HCTO3CMOS／SOD结构的集成电路．对该电路高温下的工作特性进行了研究．结果表明SOD电路在350℃下仍具有正常的逻辑功能，其工作温度明显高于体硅电路。
An integrated circuit of 54HCTO3CMOS / SOD structure was fabricated by using the thin film silicon (SOD) technology on the diamond film by using the diamond film with excellent thermal conductivity, high insulation and other excellent physical properties as the insulating layer. The operating characteristics of the circuit at high temperature were studied. The results show that the SOD circuit still has a normal logic function at 350 ° C, and its operating temperature is significantly higher than the bulk silicon circuit.