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对真空紫外光直接光ＣＶＤ法制备的ＳｉＯ２膜进行温度偏压处理，测量了处理前后的高频Ｃ－Ｖ特性曲线，计算出可动离子数为２×１０１１ｃｍ－２。处理后的特性曲线有明显的滞后效应，其滞后方向与极化效应的方向相同，其等效极化电荷数为２～５×１０１１ｃｍ－２。
The SiO2 films prepared by vacuum ultraviolet (UV) direct optical CVD were temperature-biased, and the high-frequency C-V characteristic curves were measured before and after treatment. The number of movable ions was calculated to be 2 × 1011cm-2. The treated characteristic curve has obvious hysteresis effect, and its hysteresis direction is the same as that of the polarization effect. The equivalent polarization charge number is 2 to 5 × 10 11 cm -2.