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为改善宽面940nm半导体激光二极管(LD)的输出功率及光电转换效率(WPE),设计并制作了一种包含梯度渐变折射率(GRIN)结构的新型量子阱激光器。通过二维自洽软件模拟计算了新结构激光器与传统分别限制结构(SCH)激光器的能带结构,结果表明新的激光器结构能够显著消除各异质结间的过渡势垒。通过低压金属有机物化学气相沉积(LP-MOCVD)的方法生长了高质量激光器外延材料。制成后的100μm条宽、2000μm腔长的激光器器件在室温25℃下经过连续(CW)电流测试发现,梯度渐变折射率结构激光器较分别限制结构激光器在10A电流下电压约低0.07V。通过结构与生长优化,激光器内吸收系数从0.52cm-1降至0.43cm-1,最大光电转换效率由69%提升至76%。最终制成的940nm半导体激光器器件室温25℃下输出功率10.0W(10A电流时),斜率效率高达1.24W/A。
In order to improve the output power and photoelectric conversion efficiency (WPE) of a wide-facet 940nm semiconductor laser diode (LD), a novel quantum well laser with gradient graded index (GRIN) structure was designed and fabricated. The energy band structure of a new structured laser and a conventional separately confined structure (SCH) laser was simulated by two-dimensional self-consistent software. The results show that the new laser structure can significantly eliminate the transition barrier between heterogeneous junctions. High-quality laser epitaxial materials were grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). After the fabricated 100μm wide and 2000μm cavity length laser device was subjected to continuous (CW) current test at room temperature and 25 ℃, the graded graded-index structure laser device has a lower voltage of about 0.07V at a current of 10A than the structure-controlled laser respectively. Through the optimization of structure and growth, the absorption coefficient in laser decreases from 0.52cm-1 to 0.43cm-1, and the maximum photoelectric conversion efficiency increases from 69% to 76%. The resulting 940nm semiconductor laser device has a slope efficiency of up to 1.24W / A at room temperature of 10.0W (10A current) at 25 ° C.