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为了研究新型技术对微连接可靠性的影响,阐述了微连接技术在倒装焊、热压力焊、硅通孔技术中的应用情况。对微连接技术在晶圆级封装(3D-WLP)中影响其可靠性的常见问题及主要因素进行了综述。分析表明,在常见的Sn基无铅焊料与Cu基板的反应过程中,金属间化合物层主要由Cu6Sn5和少量Cu3Sn组成。柯肯达尔孔洞、电迁移、金属间化合物的机械性能、锡须及尺寸效应是影响微连接可靠性的常见问题。在此基础上,归纳并探讨了焊料成分、微量合金、稀土元素、镀层及粉末精度等影响微连接可靠性主要因素的研究情况和发展趋势。
In order to study the influence of new technology on the reliability of micro-connection, the application of micro-connection technology in flip-chip, hot-pressure welding and through-silicon via technology is described. The common problems and main factors that affect the reliability of micro-connection technology in wafer-level package (3D-WLP) are reviewed. The analysis shows that during the reaction between the common Sn-based lead-free solder and the Cu substrate, the intermetallic compound layer mainly consists of Cu6Sn5 and a small amount of Cu3Sn. Kirkendall holes, electromigration, mechanical properties of intermetallic compounds, tin whiskers and size effects are common problems that affect the reliability of micro-connections. On this basis, the research status and development trend of the main factors affecting the reliability of micro-connection such as solder composition, microalloying, rare earth elements, coating and powder precision are summarized and discussed.