论文部分内容阅读
利用Silvaco-ATLAS软件设计了AlGaN/GaN肖特基二极管(SBD)的基本结构,主要针对功率器件的关键参数—击穿电压进行仿真模拟,分析对比了AlGaN/GaN异质结中Al的组分、二极管阳极与阴极的间距Lac、场板的引入和长度以及FP结构下钝化层Si3N4的厚度t对二极管击穿特性的影响。结果显示,Lac的增加、场板的引入和FP结构下钝化层厚度t的变化均对二极管的击穿特性有所优化,但同时,Al组分的增加和Lac的增加对二极管引入了不同程度的负面影响。仿真结果对器件的实际制作具有一定的指导意义。
The basic structure of AlGaN / GaN Schottky diode (SBD) is designed by using Silvaco-ATLAS software. The key parameters of the power device, the breakdown voltage, are simulated. The Al composition in AlGaN / GaN heterojunction , Diode anode and cathode spacing Lac, the introduction and length of the field plate and the FP structure of the passivation layer Si3N4 thickness t on the diode breakdown characteristics. The results show that the increase of Lac, the introduction of the field plate and the change of the thickness t of the passivation layer under the FP structure all optimize the breakdown characteristics of the diode, but at the same time, the increase of the Al component and the increase of Lac introduce the difference to the diode The negative impact of the degree. The simulation results have certain guiding significance for the actual fabrication of the device.