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积累区MOS电容线性度高且不受频率限制,具有反型区MOS电容不可比拟的优势.本文在研究应变Si NMOS电容C-V特性中台阶效应形成机理的基础上,通过求解电荷分布,建立了应变Si/SiGe NMOS积累区电容模型,并与实验结果进行了对比,验证了模型的正确性.最后,基于该模型,研究了锗组分、应变层厚度、掺杂浓度等参数对台阶效应的影响,为应变Si器件的制造提供了重要的指导作用.本模型已成功用于硅基应变器件模型参数提取软件中,为器件仿真奠定了理论基础.
The accumulation of MOS capacitor linearity is high and free from the frequency limit, with inversion region MOS capacitor incomparable advantages.In this paper, the study of the formation of strained Si NMOS capacitor CV characteristics based on the step effect, by solving the charge distribution, established strain Si / SiGe NMOS region capacitance model, and compared with the experimental results to verify the correctness of the model.Finally, based on the model, the effect of germanium composition, strain layer thickness, doping concentration and other parameters on the step effect , Which provides an important guide for the manufacture of strained Si devices.This model has been successfully used in the software of model parameters extraction of silicon-based strained devices, which has laid a theoretical foundation for device simulation.