Implantation induced defects and electrical properties of Sb-implanted ZnO

来源 :中国科学：技术科学英文版 | 被引量 : 0次 | 上传用户：l_zhijie1234

【摘要】

：

Defects in Sb implanted Zn O single crystals have been studied by using photoluminescence(PL) spectroscopy,X-ray diffraction(XRD) and Raman scattering.Electrica

【作者】

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XIE Hui LIU Tong LIU JingMing

【机构】

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KeyLaboratoryofSemiconductorMaterialsScience

【出处】

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中国科学：技术科学英文版

【发表日期】

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2015年8期

【关键词】

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ZNO单晶施主缺陷电学性质 X射线衍射法高温退火氧化锌光谱分析光致发光 ZnO photoluminescence Ramam scatteri

【基金项目】

：

This work was supported by the National Natural Science Foundation of China （Grant No, 61474104）.

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Defects in Sb implanted Zn O single crystals have been studied by using photoluminescence(PL) spectroscopy,X-ray diffraction(XRD) and Raman scattering.Electrical properties of the samples were analyzed by Hall effect measurement.The results indicate that

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