Particular electrical quality of a-plane GaN films grown on r-plane sapphire by metal-organic chemic

• 作 者: 许晟瑞 周小伟 郝跃 毛维 张进城 张忠芬 白琳 张金凤 李志明
• 机 构: Key Laboratory of Fundamental Sciencefor National on Wide Band-Gap Semiconductor Technology,School o
• 出 处: 半导体学报
• 发表日期: 2009年11期
• 关键词: sapphire anisotropy furthermore diagonal FWHM anisotropic capture utilized have

Nonpolar (1120) a-plane GaN films have been grown by low-pressure metal-organic vapor deposition on r-plane (1102) sapphire substrate.The structural and electrical properties of the a-plane GaN films are investigated by high-resolution X-ray diffraction (HRXRD),atomic force microscopy (AFM) and van der Pauw Hall measurement.It is found that the Hall voltage shows more anisotropy than that of the c-plane samples;furthermore,the mobility changes with the degree of the van der Pauw square diagonal to the c direction,which shows significant electrical anisotropy.Further research indicates that electron mobility is strongly influenced by edge dislocations.

Nonpolar (1120) a-plane GaN films have been grown by low-pressure metal-organic vapor deposition on r-plane (1102) sapphire substrate. Structural and electrical properties of the a-plane GaN films are investigated by high-resolution X -ray diffraction (HRXRD), atomic force microscopy (AFM) and van der Pauw Hall measurement. It is found that the Hall voltage shows more anisotropy than that of the c-plane samples; furthermore, the mobility changes with the degree of the van der Pauw square diagonal to the c direction, which shows significant electrical anisotropy. Future research indicates that electron mobility is strongly influenced by edge dislocations.