Correlation between electrical conductivity-optical band gap energy and precursor molarities ultraso

• 作 者: Said Benramache Okba Belahssen Abderrazak Guettaf Ali Arif
• 机 构: Material Sciences Laboratory, Faculty of Science, University of Biskra,Physic Laboratory of Thin Fil
• 出 处: Journal of Semiconductors
• 发表日期: 2013年11期
• 关键词: ZnO thin films correlation electrical conductivity ultrasonic spray technique

ZnO thin films were deposited using the simple,flexible and cost-effective spray ultrasonic technique at different precursor molarities values.The films were deposited on a glass substrate at 350 C.This paper is to presentanewapproachtothedescriptionofcorrelationbetweenelectricalconductivityandopticalgapenergywith precursor molarity of ZnO thin films.The ZnO films exhibit higher electrical n-type semiconductors,whose band gap energy increased from 3.08 to 3.37 eV with an increasing of precursor molarity of 0.05 to 0.1 M.The maximum value of electrical conductivity of the films is 7.96(cm)1obtained in the ZnO thin film for precursor molarity0.125 M.The correlation between the electrical and the optical properties with the precursor molarity suggests that the electrical conductivity of the films is predominantly influenced by the band gap energy and the precursor molarity.The measurement of the electrical conductivity of the films with correlation is equal to the experimental with the error is about 1%in the higher conductivity.

ZnO thin films were deposited using the simple, flexible and cost-effective spray ultrasonic technique at different precursor molar values. The films were deposited on a glass substrate at 350 C. This paper is to presentanewapproachothedescriptionofcorrelationbetweenelectricalconductivityandopticalgapenergywith precursor molarity of ZnO thin films. ZnO films exhibit higher electrical n-type semiconductors, whose band gap energy increased from 3.08 to 3.37 eV with an increasing of precursor molarity of 0.05 to 0.1 M. The maximum value of electrical conductivity of the films is 7.96 (cm) 1obtained in the ZnO thin film for precursor molarity 0.125 M.The correlation between the electrical and the optical properties with the precursor molarity suggests that the electrical conductivity of the films is predominantly influenced by the band gap energy and the precursor molarity. the measurement of the electrical conductivity of the films with correlation is equal to the experimental with the er ror is about 1% in the higher conductivity.