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基于半导体激光器列阵的高斯光束,推导了外腔半导体激光器列阵锁相单元间的耦合系数,数值计算了侧模各单元间的耦合系数与外腔长度的关系.研究结果表明:同阶侧模各级次耦合系数的极大值随着耦合级次的增大而减少,并且其极大值所对应的腔长随着耦合级次的增大而增大;不同阶侧模同级次耦合系数的极大值所对应的腔长随着阶次的增大而减少.研究结果与已有的实验报道和理论分析相符.
Based on the Gaussian beam of a semiconductor laser array, the coupling coefficient between the phase locking units of the external cavity semiconductor laser array was deduced, and the relationship between the coupling coefficient and the length of the external cavity was numerically calculated.The results show that the same order The maximal value of the coupling coefficient at each level of the mode decreases with the increase of the coupling level, and the cavity length corresponding to its maximum value increases with the increase of the coupling level. The cavity length corresponding to the maximum of coupling coefficient decreases with the increase of order.The results are in good agreement with the existing experimental reports and theoretical analysis.