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对0.18μm metal-oxide-semiconductor field-effect-transistor(MOSFET)器件进行γ射线辐照实验,讨论分析器件辐照前后关态漏电流、阈值电压、跨导、栅电流、亚阈值斜率等特性参数的变化,研究深亚微米器件的总剂量效应.通过在隔离氧化物中引入等效陷阱电荷,三维模拟结果与实验结果符合很好.深亚微米器件栅氧化层对总剂量辐照不敏感,浅沟槽隔离氧化物是导致器件性能退化的主要因素.
The γ-ray irradiation experiment of 0.18μm metal-oxide-semiconductor field-effect-transistor (MOSFET) device was carried out to discuss the characteristic parameters of leakage current, threshold voltage, transconductance, gate current and subthreshold slope before and after irradiation , The total dose effect of deep submicron devices is studied.The 3D simulation results are in good agreement with the experimental results by introducing equivalent trap charges into the isolation oxide.The gate oxide layer of the deep submicron devices is not sensitive to the total dose irradiation, Shallow trench isolation oxide is the main factor leading to the degradation of device performance.