A 0.18μm CMOS dual-band low power low noise amplifier for a global navigation satellite system

• 作 者: 李兵 庄奕琪 李振荣 靳刚
• 机 构: Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Sc
• 出 处: 半导体学报
• 发表日期: 2010年12期
• 关键词: navigation A 0.18 amplifier receiver details figure consistency bands GNSS satis

This paper presents a dual-band low noise amplifier for the receiver of a global navigation satellite system. The differences between single band and multi-band design methods are discussed.The relevant parameter analysis and the details of circuit design are presented.The test chip was implemented in a TSMC 0.18μm 1P4M RF CMOS process.The LNA achieves a gain of 16.8 dB/18.9 dB on 1.27 GHz/1.575 GHz.The measured noise figure is around 1.5-1.7 dB on both bands.The LNA consumes less than 4.3 mA of current from a 1.8 V power supply.The measurement results show consistency with the design.And the LNA can fully satisfy the demands of the GNSS receiver.

This paper presents a dual-band low noise amplifier for the receiver of a global navigation satellite system. The differences between single band and multi-band design methods are discussed. The relevant parameter analysis and the details of circuit design are presented. The test chip was implemented in a TSMC 0.18 μm 1P4M RF CMOS process. The LNA achieves a gain of 16.8 dB / 18.9 dB on 1.27 GHz / 1.575 GHz. The measured noise figure is around 1.5-1.7 dB on both bands. The LNA consume less than 4.3 mA of current from a 1.8 V power supply. measurement results show consistency with the design. And the LNA can satisfy the demands of the GNSS receiver.