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基于p型半导体与n型半导体间的特殊p-n结效应可有效提高紫外探测器的紫外光敏性能,研究了高密度p型聚苯胺(PANI)纳米线阵列的制备方法,及其与n型单晶硅片组装为具有p-n结效应的高性能紫外探测器的方法.采用旋涂煅烧法在单晶硅片表面制备了二氧化锰层,研究了以其为种子层制备高密度聚苯胺纳米线阵列的方法,并考察了不同制备条件对聚苯胺形貌的影响,揭示了聚苯胺纳米线阵列的形成机理.结果表明,利用二氧化锰种子层对溶液中苯胺的氧化作用,可优先在二氧化锰层表面形成聚苯胺纳米粒子,然后再向溶液中加入另一氧化剂过硫酸铵(APS),可使聚苯胺纳米粒子沿垂直于衬底方向进一步生长,从而制得了分布均匀的高密度p型聚苯胺纳米线阵列.利用p型聚苯胺纳米线阵列与n型单晶硅片间特殊的p-n结效应,构筑了性能优良的紫外探测器,对紫外光响应速度快、恢复时间短、稳定性好.当外置偏压为0 V时,光电流可达9.2×10-8A;且随外置偏压提高,光电流强度大大增强,当外置偏压提高至5 V时,光电流可达3.2×10-5A,比0 V时提高了约1000倍.
Based on the special pn junction effect between p-type semiconductor and n-type semiconductor, the ultraviolet photodegradation performance of UV detector can be effectively improved. The preparation method of high-density p-type polyaniline (PANI) The method of assembling the silicon wafer into a high-performance UV detector with pn junction effect is that the manganese dioxide layer is prepared on the surface of the monocrystalline silicon wafer by the spin-coating calcination method, and the high density polyaniline nanowire array , And investigated the effect of different preparation conditions on the morphology of polyaniline and revealed the formation mechanism of polyaniline nanowire arrays.The results show that the use of manganese dioxide seed layer on the aniline oxidation in solution, The formation of polyaniline nanoparticles on the surface of the manganese layer, and then adding another oxidant ammonium persulfate (APS) to the solution can further grow the polyaniline nanoparticles along the direction perpendicular to the substrate to obtain a uniformly distributed high-density p-type Polyaniline nanowire arrays.Using p-type polyaniline nanowire arrays and n-type single-crystal silicon between the special pn junction effect, to build a good performance UV detector, fast response to UV light, Time is short and stability is good.When the external bias voltage is 0 V, the photocurrent can reach 9.2 × 10 -8 A. With the external bias voltage increasing, the photocurrent intensity is greatly enhanced. When the external bias voltage is increased to 5 V , The photocurrent can reach 3.2 × 10-5A, which is about 1000 times higher than that at 0V.