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在肖特基二极管(Schottky barrier diode,SBD)辐照损伤机理和总剂量效应分析的基础上,利用1/f噪声的迁移率涨落和载流子数涨落模型,深入研究辐照损伤对器件1/f噪声的影响.研究结果表明,辐照诱生新的界面态,改变界面态密度分布,进而调制了肖特基势垒高度,增大表面复合速度是引起器件性能退化主要原因,也是1/f噪声剧烈增加的主要原因.正因为如此,噪声与器件退化存在相关性,即噪声拟合参数B越大,偏离标准值越多,器件可靠性越差,抗辐照能力越低,在辐照环境下工作越容易失效.由此可知,1/f噪声特性可以用作SBD辐照损伤机理的研究工具,并有可能用于SBD抗辐射加固的无损评估.
Based on the damage mechanism of the Schottky barrier diode (SBD) and the analysis of the total dose effects, the model of migration damage and carrier number fluctuation of 1 / f noise is used to study the effects of irradiation damage Device 1 / f noise.The results show that the radiation induced new interface state, changing the interface state density distribution, and then modulating the Schottky barrier height, increasing the surface recombination speed is the main reason causing device performance degradation, Which is also the main reason for the sharp increase of 1 / f noise. Because of this, there is a correlation between noise and device degradation. That is, the larger the noise fitting parameter B, the more deviation from the standard value, the worse the device reliability and the lower the anti-radiation ability , The more likely it is to work in an irradiated environment.Therefore, the 1 / f noise characteristics can be used as a research tool for SBD irradiation damage mechanism and may be used for the nondestructive evaluation of SBD radiation reinforcement.