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本文提出了High-lowmulti-frequency(HLMF)和Average bottom-top-pulse(ABTP)两种电荷泵改进技术,用于提高表征超薄栅氧化CMOS器件界面缺陷的精度。结果表明,在电荷泵技术测量过程中,这两种改进技术能非常有效地扣除漏电流。同时,也分析了电荷泵电流曲线的几个典型特性。由于ABTP技术是用静态模式测量漏电流,所以,在大的负Vbase端,电荷泵电流曲线的尾部出现大的波动。通过比较,我们发现HLMF具有更高的精度,可以作为用于提升表征超薄栅氧化CMOS器件界面缺陷精度的一种重要技术。
This paper presents two charge pump improvement techniques, High-lowmulti-frequency (HLMF) and Average bottom-top-pulse (ABTP), to improve the accuracy of characterizing interface defects in ultra-thin gate oxide CMOS devices. The results show that these two improved techniques can effectively deduct the leakage current during the charge pump measurement. At the same time, it also analyzes several typical characteristics of the charge pump current curve. Since the ABTP technique measures the leakage current in static mode, there is a large fluctuation in the tail of the charge pump current curve at the large negative Vbase. By comparison, we found that HLMF has higher accuracy and can be used as an important technique for improving the accuracy of characterization of interface defects in ultra-thin gate oxide CMOS devices.