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研究了在T=77°K时的锑化铟p-n结在各种偏压和照度下的低频(频率=20赫-20千赫)噪声频谱。发现在无光照时,欧姆漏电流起伏是电流噪声的主要原因。只是在足够大的正偏压时,才发现空间电荷区有电导起伏。光照期间光电流的起伏对过剩噪声有很大的影响。表明在空间电荷区内产生了电流起伏,其起伏程度不仅取决于电压的偏压值,而且也取决于照度级L。还发现P-n结的其他一些特性也都以照度级为条件:二极管的光电效率随照度级L的增大而降低,并且在恒偏压下测定的p-n结正电流以及空间电荷区的等效微分电导都有增大。这种变化可解释为空间电荷区内的载流子寿命缩短了,或空间电荷区的宽度增大了。引证了一些宗数,来证明这个论点:即仅在以电流电导的特殊机理为表征的空间电荷区的某些区内,产生电导的过度起伏。
The low frequency (frequency = 20 Hz-20 kHz) noise spectrum of indium antimonide p-n junctions at various bias voltages and illuminances was studied at T = 77 ° K. It is found that the ohmic leakage current undulation is the main cause of current noise in the absence of light. Only in the large enough positive bias, only to find the space charge region conductivity fluctuations. The fluctuation of photocurrent during lighting has a great influence on the excess noise. It is shown that a current fluctuation occurs in the space charge region, the degree of fluctuation of which depends not only on the voltage bias value but also on the illumination level L. FIG. It has also been found that other characteristics of the Pn junction are also conditioned on the illumination level: the photoelectric efficiency of the diode decreases as the illumination level L increases, and the positive pn junction current measured at constant bias and the equivalent differential of the space charge region Conductivity has increased. This change can be explained by the shortened carrier lifetime in the space charge region or the increase in the width of the space charge region. A few numbers have been cited to prove the argument that over-fluctuations in conductance occur only in certain regions of the space charge region characterized by a particular mechanism of current conductance.