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采用ｍｅｔａｌｖａｐｏｒｖａｃｕｕｍａｒｃ离子源的离子束合成方法，对单晶Ｓｉ衬底注入Ｃ＋离子，获得不同剂量下的ＳｉＣ埋层．Ｃ＋离子束的引出电压为５０ｋＶ，注入的剂量为３０×１０１７—１６×１０１８ｃｍ－２．通过红外吸收谱的测试和分析，表明ＳｉＣ埋层的结晶程度依赖于剂量的大小．研究证实，可以在较低的平均衬底温度下（低于４００℃）得到含立方相结构的ＳｉＣ埋层．
The ion implantation method of metalvaporvacuumarc ion source was used to implant single crystal Si substrate with C + ions to obtain SiC buried layers under different doses. C + ion beam extraction voltage of 50kV, the dose of 3 0 × 1017-1 6 × 1018cm-2. The infrared absorption spectra of the test and analysis show that the degree of crystallinity of the SiC buried layer depends on the size of the dose. The research confirmed that SiC buried layer with cubic phase structure can be obtained at lower average substrate temperature (less than 400 ℃).