,Improvement of the Quality of a GaN Epilayer by Employing a SiNx Interlayer

• 作 者: YANG De-Chao LIANG Hong-Wei SONG Shi-Wei LIU Yang SHEN Ren-Sheng LUO Ying-Min ZHAO Hai-Feng DU Guo-Tong
• 机 构: State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, J
• 出 处: 中国物理快报（英文版）
• 发表日期: 2012年8期

GaN epilayers with a porous SiNx interlayer were grown by metal-organic chemical vapor deposition on c-plane sapphire substrates.It is found that the crystalline qualities are significantly improved with SiNx growth.The improvement is attributed to the reduction of the density of threading dislocations (TDs) by an over-growth process of GaN grown on a SiNx interlayer.The influence mechanism of SiNx interlayers on GaN growth mode is also discussed.