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用电子回旋共振微波等离子体辅助金属有机化学气相沉积（ＥＣＲ－ＰＡＭＯＣＶＤ）法，在低温条件下，在（００１）ＧａＡｓ衬底上异质外延，生长了立方晶ＧａＮ薄膜．高分辩电镜（ＨＲＥＭ）观测与Ｘ射线衍射（ＸＲＤ）测量结果表明：ＧａＮ薄膜具有典型的闪锌矿结构；三种方法测得其晶格常数为０．４５１～０．４５７ｎｍ；在ＧａＮ／ＧａＡｓ界面处的生长模式为异质外延；ＧａＮ薄膜中的位错主要为堆垛层错与刃形位错；随着远离界面，ＧａＮ中位错密度与镶嵌组织迅速减少．
An electron cyclotron resonance microwave plasma-assisted metal-organic chemical vapor deposition (ECR-PAMOCVD) method was used to grow a cubic GaN film on a (001) GaAs substrate at low temperature. High resolution scanning electron microscopy (HREM) and X-ray diffraction (XRD) measurements show that the GaN films have a typical sphalerite structure. The lattice constants of the films are 0.451 ~ 0.457nm. The growth mode at the interface is heteroepitaxial. The dislocations in the GaN film are mainly stacking faults and edge dislocations. The dislocation density and the mosaic structure in GaN decrease rapidly with the distance from the interface.