论文部分内容阅读
本文介绍了低压硅外延的基本原理、工艺过程和系统设备。在实验的基础上并对外延层缺陷进行了探讨,采用SF_6汽相抛光和全硬接不锈钢管道系统,使缺陷有明显的改善,达到10~3数量级。
This article describes the basic principles of low-voltage silicon epitaxy, process and system equipment. On the basis of the experiment, the defects of the epitaxial layer were also discussed. The SF6 vapor-phase polish and the fully-hardened stainless steel pipe system were used to make the defects remarkably improve to 10 ~ 3 orders of magnitude.