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对GaAs/AlxGa1-xAs半导体异质结系统,引入实际异质结势,同时考虑体纵光学(LO)声子和两支界面光学(IO)声子的影响,采用变分法讨论了外界磁场和压力对束缚极化子的影响.利用改进的Lee-Low-Pines(LLP)中间耦合方法处理电子-声子和杂质-声子的相互作用,计算了束缚极化子结合能随压力、磁场强度、杂质位置的变化关系.结果表明,结合能和声子对结合能的贡献随压力和磁场强度的增加而增大.磁场对于IO声子和LO声子对结合能贡献的影响是非线性的,而压力对二者的影响均是近线性的,且磁场和压力对LO声子的作用更为显著.
In the GaAs / AlxGa1-xAs semiconductor heterojunction system, the actual heterostructure potential is introduced, taking into account the influence of the longitudinal optical (LO) phonons and the two interface optical (IO) phonons, the variation of the external magnetic field And pressure on the binding polaron.The interaction between the electron-phonon and the impurity-phonon was dealt with by the improved Lee-Low-Pines (LLP) intermediate coupling method, and the binding energy of the binding polaron with pressure and magnetic field The results show that the contribution of binding energy and phonon to binding energy increases with the increase of pressure and magnetic field.The influence of magnetic field on the binding energy of IO phonon and LO phonon is nonlinear , While the effects of pressure on both are nearly linear, and the effect of magnetic field and pressure on LO phonon is more significant.