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采用不同硅化工艺制备了NiSi薄膜并用剖面透射电镜(XTEM)对样品的NiSi/Si界面进行了研究.在未掺杂和掺杂(包括As和B)的硅衬底上通过物理溅射淀积Ni薄膜,经快速热处理过程(RTP)完成硅化反应.X射线衍射和喇曼散射谱分析表明在各种样品中都形成了NiSi.还研究了硅衬底掺杂和退火过程对NiSi/Si界面的影响.研究表明使用一步RTP形成NiSi的硅化工艺,在未掺杂和掺As的硅衬底上,NiSi/Si界面较粗糙;而使用两步RTP形成NiSi所对应的NiSi/Si界面要比一步RTP的平坦得多.高分辨率XTEM分析表明,在所有样品中都形成了沿衬底硅〈111〉方向的轴延-NiSi薄膜中的一些特定晶面与衬底硅中的(111)面对准生长.同时讨论了轴延中的晶面失配问题.
NiSi thin films were prepared by different silicidation processes and the NiSi / Si interface of the samples was investigated by cross-section transmission electron microscopy (XTEM). The NiSi / Si interface was deposited on the un-doped and doped (including As and B) Ni thin films were deposited on the NiSi / Si interface by RTP.The results of X-ray diffraction and Raman scattering spectra showed that NiSi was formed in various samples.The effect of Si substrate doping and annealing on the NiSi / Si interface .The results show that the NiSi / Si interface is rough on the un-doped and As-doped Si substrate by using one-step RTP to form NiSi.While using the two-step RTP to form NiSi, the NiSi / The one-step RTP is much flatter.High-resolution XTEM analysis shows that some of the epitaxial-NiSi films along the substrate Si <111> direction and the (111) Face-to-face growth.At the same time, we discuss the mismatch of crystal planes in the axis-extension.