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本文测量了硼离子注入多晶硅薄膜经热退火及激光退火后的电学性质,并用晶界陷阱模型进行了理论计算。计算结果与实验符合。发现经激光退火后,晶粒变得足够大时迁移率最小值发生在10~(-17)Cm~(-8)附近,而不是在 N=N~*处。
In this paper, the electrical properties of polycrystalline silicon films after thermal annealing and laser annealing were measured and calculated theoretically using the grain boundary trap model. The calculation results are consistent with the experiment. It is found that the minimum mobility after the laser annealing becomes large near 10 ~ (-17) Cm ~ 8 instead of at N = N ~ *.