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Effect of oxygen and hydrogen on electron irradiated defects of Si single crystal has been studied.These CZ-Si andFZ-Si single crystal specimens were irradiated by electron beam with energy of～IMV in HVEM at temperature be-tween 298K and 773K.It was found that irradiated defects were easier to be produced in Si single crystal containing ox-ygen than in Si containing hydrogen.The irradiated defects had the larger density and shorter incubation time in Si con-taining oxygen.The bar-like defects,stacking faults and loops were along〈110〉direction.Bar-like defects and stack-ing faults had the Burgers vector〈116〉type and the stacking faults were on the(113) plane.The unfault process pro.duced interstitial loops with Burgers vectora/2〈110〉.
Effect of oxygen and hydrogen on electron irradiated defects of Si single crystal has been studied. The CZ-Si and FZ-Si single crystal specimens were irradiated by electron beam with energy of ~ IMV in HVEM at temperature be-tween 298K and 773K.It was found that irradiated defects were easier to be produced in Si single crystal containing ox-ygen than in Si containing hydrogen. The irradiated dental had the greater density and shorter incubation time in Si con-taining oxygen. the bar-like defects, stacking faults and loops were along <110> direction. Bar-like defects and stack-ing faults had the Burgers vector <116> type and the stacking faults were on the (113) plane. <110>.