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研究了掺砷多晶硅发射极 RCA晶体管的工艺实验技术 .以先进多晶硅发射极器件制备工艺为基础 ,在淀积发射极多晶硅之前 ,用 RCA氧化的方法制备了一层超薄氧化层 ,并采用氮气快速热退火的方法处理 RCA氧化层 ,制备出可用于低温超高速双极集成电路的掺砷多晶硅发射极 RCA晶体管 .晶体管的电流增益在 - 55— + 1 2 5℃温度范围内的变化率小于 1 5% ,而且速度快 ,发射区尺寸为 4× 1 0μm2 的 RCA晶体管其特征频率可达 3.3GHz.
The experimental technology of arsenic doped polycrystalline silicon emitter RCA transistor was studied.Based on the preparation process of advanced polycrystalline silicon emitter device, an ultrathin oxide layer was prepared by RCA oxidation before the deposition of emitter polycrystalline silicon, Rapid thermal annealing method to process the RCA oxide layer to prepare an arsenic-doped polysilicon emitter RCA transistor which can be used in a low temperature and high speed bipolar integrated circuit. The current gain of the transistor has a rate of change within a temperature range of -55 to + 125 ℃ 15%, and the speed is very fast. The characteristic frequency of the RCA transistor with the emitting area size of 4 × 10μm2 can reach 3.3GHz.