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结合多项用于深亚微米集成电路的新技术 ,提出了用于数 GHz射频集成电路的 SOI n MOSFET器件结构和制造工艺 .经过半导体工艺模拟软件 Tsuprem4仿真和优化 ,给出了主要的工艺步骤和详细的工艺条件 .制作了0 .2 5 μm SOI射频 n MOSFET器件 ,结构和工艺参数同仿真结果一致 ,测试获得了优良的或可接受的直流及射频性能
Combined with a number of new technologies for deep sub-micron integrated circuits, the SOI n MOSFET device structure and manufacturing process for several GHz RFICs are proposed. After the simulation and optimization of the Tsuprem4 semiconductor process simulation software, the main process steps And detailed process conditions, a 0.52 μm SOI RF n MOSFET device was fabricated with the same structure and process parameters as the simulation results, with excellent or acceptable DC and RF performance