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采用电化学腐蚀法,通过改变腐蚀电流密度制备出不同孔径的多孔硅衬底。通过荧光分光光度计对多孔硅进行光致发光性能测试,测试结果发现腐蚀电流密度会对其光致发光性能产生影响,当腐蚀电流密度为30 mA/cm~2时,制备出的多孔硅光致发光性能较好。通过湿法转移法将化学气相沉积(CVD)法制备出的石墨烯转移到多孔硅表面,利用喇曼光谱对石墨烯进行质量及层数检测。通过荧光分光光度计及傅里叶变换红外光谱仪(FTIR)对复合材料进行表征。结果表明石墨烯可以改变多孔硅表面态,使多孔硅的光致发光性能得到极大的提高。研究成果为多孔硅应用到光学传感器中提供了新的研究方向。
Using electrochemical etching method, porous silicon substrates with different pore sizes were prepared by changing the corrosion current density. The photoluminescence properties of porous silicon were tested by fluorescence spectrophotometer. The results showed that the corrosion current density had an impact on the photoluminescence properties. When the corrosion current density was 30 mA / cm ~ 2, the prepared porous silicon Luminescence performance is better. The graphene prepared by chemical vapor deposition (CVD) method was transferred to the surface of porous silicon by wet transfer method, and the mass and number of layers of graphene were detected by Raman spectroscopy. The composites were characterized by fluorescence spectrophotometer and Fourier transform infrared spectroscopy (FTIR). The results show that graphene can change the surface state of porous silicon, so that the photoluminescence properties of porous silicon have been greatly improved. The research results provide a new research direction for the application of porous silicon in optical sensors.