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采用热蒸发法在ZnO缓冲层覆盖着Si衬底上合成了2D叶状的Zn晶枝结构,Zn的晶枝长度约为几十微米,厚度约为200nm,随后Zn晶枝在O2的气氛下热处理,在晶枝表面获得纤细、均匀的ZnO纳米线。晶枝按照无催化、自组装、汽相生长模式生长,晶枝最快生长方向是沿着载气气流的方向释放凝固潜热,XRD分析结果结果显示了Zn纳米线具有六角纤锌矿结构,Zn/ZnO的发光谱显示,在380nm处有一弱的UV近带边发射和中心在505nm处的强绿光发射,绿光发射归因于施主/受主对之间的辐射跃迁。
A 2D leaf-shaped Zn crystal structure was synthesized by thermal evaporation on a Si substrate covered with a ZnO buffer layer. The crystal growth length of Zn was about several tens of micrometers and the thickness was about 200 nm. The Zn crystal was then heat- Crystal surface of the slender, uniform ZnO nanowires. The crystal growth of branch was in a noncatalytic, self-assembled and vapor phase growth mode. The fastest growth direction of crystal branch was the release of latent heat of solidification along the direction of carrier gas flow. The results of XRD showed that the Zn nanowire had hexagonal wurtzite structure, Zn / ZnO Shows a weak UV near-band emission at 380 nm and a strong green emission centered at 505 nm, which is attributed to the transition of the radiation between donor / acceptor pairs.