Investigation on quality of cubic GaN/GaAs (100) by double-crystal X-ray diffraction

• 作 者: 徐大鹏 吴荣汉
• 出 处: Science in China,Ser.A
• 发表日期: 1999年05期
• 关键词: cubic hexagonal characterize MOCVD Triple crystalline fabrication spacing macros

Cubic GaN was grown on GaAs (100) by low pressure metal organic chemical vapor deposition (MOCVD). X-ray diffraction, scanning electron microscope (SEM) and photoluminescence (PL) spectra were performed to characterize the quality of the GaN film. The PL spectra of cubic GaN thin films being thicker than 1.5 μm were reported. Triple-crystal diffraction to analyze orientation distributions and strain of the thin films was also demonstrated.

Cubic GaN was grown on GaAs (100) by low pressure metal organic chemical vapor deposition (MOCVD). X-ray diffraction, scanning electron microscope (SEM) and photoluminescence (PL) spectra were performed to characterize the quality of the GaN film. PL spectra of cubic GaN thin films being thicker than 1.5 μm were reported. Triple-crystal diffraction to analyze orientation distributions and strain of the thin films was also demonstrated.