STUDY OF SURFACE RESISTIVITY MODIFICATION IN Al_2O_3 CERAMIC IMPLANTED BY Fe~(2+)

• 作 者: 李世普 任卫 王国梅 邢宁 陈晓明
• 出 处: Journal of Wuhan University of Technology-Materials Science
• 发表日期: 1991年02期
• 关键词: implanted SURFACE ceramic forbidden resistivity conclusion insulator replace acc

The implanted ion range, the depth profileand the film sttucture of the implanted layer werestudied; the carrier concentration and the mobilitywere measured; the conductivity mechanism of thefilm implanted Fe into Al_2O_3 ceramic was discussed.The conclusion is that the implanted Fe~(2+) ions moveinto Al_2O_3 lattice and replace Al~(3+) to form subs-titution impurities so that the ion implanted lat-tice, as compared with the original one, presentsan effective negative charge which forms a negativecharge center. A vacancy is bound arround it, andan acceptor is introduced in the forbidden band.

The implanted ion range, the depth profile and the film sttucture of the implanted layer were stamped; the carrier concentration and the mobility measure; the conductivity mechanism of the film implanted Fe into Al 2 O 3 ceramic was discussed. The conclusion is that the implanted Fe ~ (2+) ions moveinto Al_2O_3 lattice and replace Al ~ (3+) to form subs-titution impurities so that the ion implanted lat-tice, as compared with the original one, presentsan effective negative charge which forms a negativecharge center. A vacancy is bound arround it , andan acceptor is introduced in the forbidden band.