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太赫兹源的输出功率是限制太赫兹技术远距离应用的重要参数。为了实现高效的太赫兹倍频器,基于高频特性下肖特基二极管的有源区电气模型建模方法,利用指标参数不同的两种肖特基二极管,研制出了两种170 GHz平衡式倍频器。所采用的肖特基二极管有源结区模型完善地考虑了二极管IV特性,载流子饱和速率限制,直流串联电阻以及趋肤效应等特性。通过对两种倍频器仿真结果进行对比,完备地分析了二极管主要指标参数对倍频器性能的影响。最后测试结果显示两种平衡式170 GHz倍频器在155~178 GHz工作带宽内的最高倍频效率分别大于11%和24%,最高输出功率分别大于15 m W和25 m W。从仿真和测试结果表示,采用的肖特基二极管建模方法和平衡式倍频器结构适用于研制高效的太赫兹倍频器。
The output power of a terahertz source is an important parameter that limits the application of terahertz technology over long distances. In order to realize an efficient THz frequency multiplier, based on the Schottky diode active-region electrical modeling method under high-frequency characteristics, two kinds of Schottky diodes with different index parameters were used to develop two 170 GHz balanced Multiplier. The Schottky diode active junction model used fully considers the diode IV characteristics, carrier saturation rate limit, DC series resistance, and skin effect characteristics. By comparing the simulation results of the two frequency multipliers, the influence of the main parameters of the diode on the performance of the frequency multiplier is analyzed thoroughly. The final test results show that the maximum frequency doubling efficiencies of the two balanced 170 GHz frequency multipliers are greater than 11% and 24%, respectively, over the operating bandwidth of 155 to 178 GHz with maximum output powers greater than 15 mW and 25 mW, respectively. From the simulation and test results show that the Schottky diode modeling method and balanced multiplier structure used for the development of efficient THz multiplier.