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An n-TiO2/n-Si isotype heterojunction is fabricated by depositing TiO2 thin films onto n-Si substrates.Obvious photovoltaic behaviors are observed in this isotype heterojunction.The open circuit voltage and short circuit current of the heteroj unction can reach 123 m V and 20 μA/cm2,respectively.The mechanism for the photovoltaic behaviors can be understood in terms of the band alignment of the heterojunction.The results reported may provide a feasible route to easily available and low-cost isotyped photovoltaic devices.